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| SI2304DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V ID (A) 2.5 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View SI2304DS (A4)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg Limit 30 "20 2.5 2.0 Unit V A 10 1.25 1.25 W 0.80 -55 to 150 _C Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc Notes a. Surface Mounted on FR4 Board, t v 5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70756 S-63633--Rev. D, 01-Nov-99 www.vishay.com S FaxBack 408-970-5600 RthJA 166 Symbol Limit 100 Unit _C/W 1 SI2304DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = 30 V, VGS = 1.0 V, TJ =25_C On-State Drain Currenta ID(on) VDS w 4.5 V, VGS = 10 V VDS w 4.5 V, VGS = 4.5 V VGS = 10 V, ID = 2.5 A rDS(on) VGS = 4.5 V, ID = 2.0 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = 4.5 V, ID = 2.5 A IS = 1.25 A, VGS = 0 V 0.142 4.6 0.77 1.2 0.190 S V 6 A 4 0.092 0.117 W 30 V 1.5 "100 0.5 10 1 mA A nA Symbol Test Conditions Min Typ Max Unit Drain-Source On-Resistancea Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgt Qgs Qgd Ciss Coss Crss VDS = 15 V VGS = 0 V, f = 1 MHz V, V MH VDS = 15 V VGS = 10 V ID = 2.5 A V, V, 25 VDS = 15 V, VGS = 5 V, ID = 2.5 A 2.4 4.5 0.8 1.0 240 110 17 pF F 4 10 nC C Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW v300 ms duty cycle v2%. td(on) tr td(off) tf VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, 8 12 17 8 20 30 ns 35 20 www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70756 S-63633--Rev. D, 01-Nov-99 SI2304DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Output Characteristics 10 Transfer Characteristics VGS = 10 V - 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4V 6 4 4 TC = 125_C 2 25_C -55_C 2 0V > 0 2 4 6 8 3V 0 10 0 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Drain Current 0.30 500 Capacitance r DS(on)- On-Resistance ( W ) 0.24 VGS = 4.5 V 0.18 C - Capacitance (pF) 400 300 Ciss 200 Coss 100 Crss 0.12 VGS = 10 V 0.06 0 0 2 4 6 8 10 0 0 6 12 18 24 30 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 2.5 A V GS - Gate-to-Source Voltage (V) Gate Charge 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A r DS(on)- On-Resistance ( W ) (Normalized) 0 1 2 3 4 5 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70756 S-63633--Rev. D, 01-Nov-99 www.vishay.com S FaxBack 408-970-5600 3 SI2304DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.6 On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.4 0.3 ID = 2.5 A TJ = 150_C TJ = 25_C 0.2 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 0.2 0.1 V GS(th) Variance (V) -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -50 0 0.01 2 ID = 250 mA Power (W) 8 10 Single Pulse Power 6 TC = 25_C Single Pulse 4 -25 0 25 50 75 100 125 150 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70756 S-63633--Rev. D, 01-Nov-99 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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